PART |
Description |
Maker |
MIE-514H4 514H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极 Infrared Emitting Diodes (IRED)
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Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
VSMY2850G |
High Speed Infrared Emitting Diodes
|
Vishay Siliconix
|
VSMF2893SLX01 |
High Speed Infrared Emitting Diode, 890 nm, GaAlAs, DH
|
Vishay Siliconix
|
VSMF2893GX01 |
High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH
|
Vishay Siliconix
|
VSMB2020X01 VSMB2000X01 |
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, DH
|
Vishay Siliconix
|
VSMG10850-13 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs, DH
|
Vishay Siliconix
|
VSMB2948SL |
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
|
Vishay Siliconix
|
VSLB3940 VSLB394010 |
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
|
Vishay Siliconix
|
VSMB14940 |
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
|
Vishay Siliconix
|
TSHG5510 |
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
TSHG8400 TSHG840009 |
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
|
http:// Vishay Siliconix
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